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Sr. RF Modeling Engineer

ONSITE FULL_TIME MID_LEVEL
Requisition ID: 53183
Location: Bangalore, India
Job Type: Permanent

Job Overview:

RF Modeling Engineer to join team will be responsible for enabling high quality compact models for GaAs, GaN, SiGe & RF CMOS technologies. Experienced in RF model extraction, characterization, model creation/improvement and integration into the Design Environment. Candidate will work closely with Renesas’ foundry partners to ensure models delivered meet the requirements of Design & Product teams. Plan and devise model advancements and improvements in conjunction with foundry partners, academic and industrial groups to allow Renesas to deliver world class differentiated RF products.

Key Accountabilities:

  • Advance the SPICE Modeling capabilities of new GaAs pHEMT/HBT, GaN HEMT and CMOS technology for RF applications.
  • Support RF product development teams modeling requirements for NPI (New Product Introduction) process. Work closely with foundries & product teams to ensure timely delivery of RF models.
  • Modeling of linear and non-linear RF circuit elements used with our RF transistors. This includes model extraction using tools such as ICCAP & ADS/AWR.
  • Evaluate foundry SPICE models and collaborate with foundries to solve modeling issues and advance simulation accuracy.
  • Work on test chip specification & hands-on test structure characterization: DC IV, S-parameters & pulsed IV. Model validation by making load pull measurements for large signal performance & impedance.
  • Help create improved simulation & design methodologies for GaAs, GaN & CMOS RF technologies. Work closely with CAD teams and EDA vendors to implement such methodologies.
  • Actively participate in industry modeling forums and conferences through publication or event participation.

Key Attributes:

  • MS in EE or Physics with at least 3 years of modeling experience of GaAs pHEMT/HBT, GaN HEMT and CMOS technologies for RF applications
  • Solid knowledge of Bipolar and MOSFET device physics
  • DC IV, pulsed IV, RF and load-pull Characterization of active & passive devices and substrate from sub-6GHz to mmWave range.
  • Well-versed in SPICE model extraction, simulation, and EDA tool implementations
  • Good written and oral communication skills.
  • Preferred knowledge: RF circuit design, IC process of GaAs/GaN/CMOS.
  • Knowledge of 3D-EM (HFSS) a plus.

To Make Our Lives Easier

Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. Learn more at renesas.com. Follow us on LinkedIn, Facebook, Twitter, YouTube, and Instagram.

Renesas’ mission, To Make Our Lives Easier, is underpinned by our company culture, TAGIE. TAGIE stands for Transparent, Agile, Global, Innovative and Entrepreneurial. Our goal is to embed this unique culture in everything we do to succeed as a company and create trust with our diverse colleagues, customers and stakeholders.

We are committed to creating a diverse culture where everyone is included and feels a sense of belonging. For more information, please read our Diversity & Inclusion Statement.
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Location: Bengaluru, Karnataka, India
Company: Renesas Electronics

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